? semiconductor components industries, llc, 2010 april, 2010 ? rev. 3 1 publication order number: ndf04n60z/d ndf04n60z, ndp04n60z, ndd04n60z n-channel power mosfet 600 v, 1.8 features ? low on resistance ? low gate charge ? 100% avalanche tested ? these devices are pb ? free and are rohs compliant absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol ndf ndp ndd unit drain ? to ? source voltage v dss 600 v continuous drain current r jc i d 4.4 (note 2) 4.4 4.1 a continuous drain current r jc , t a = 100 c i d 2.8 (note 2) 2.8 2.6 a pulsed drain current, v gs @ 10v i dm 18 (note 2) 18 16 a power dissipation r jc (note 1) p d 28 96 83 w gate ? to ? source voltage v gs 30 v single pulse avalanche energy, i d = 4.0 a e as 120 mj esd (hbm) (jesd22 ? a114) v esd 3000 v rms isolation voltage (t = 0.3 sec., r.h. 30%, t a = 25 c) (figure 15) v iso 4500 ? ? v peak diode recovery dv/dt 4.5 (note 3) v/ns continuous source current (body diode) i s 4.0 a maximum temperature for soldering leads t l 260 c operating junction and storage temperature range t j , t stg ? 55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 sq. pad size (cu area = 1.127 in sq [2 oz] including traces). 2. limited by maximum junction temperature 3. i sd = 4.0 a, di/dt 100 a/ s, v dd bv dss , t j = +150 c http://onsemi.com v dss r ds(on) (typ) @ 2 a 600 v 1.8 to ? 220fp case 221d style 1 to ? 220ab case 221a style 5 dpak case 369aa style 2 1 2 3 4 ipak case 369d style 2 1 2 3 4 see detailed ordering and shipping information in the package dimensions section on p age 6 of this data sheet. ordering information 1 2 3 1 2 3 n ? channel g (1) d (2) s (3)
ndf04n60z, ndp04n60z, ndd04n60z http://onsemi.com 2 thermal resistance parameter symbol value unit junction ? to ? case (drain) ndp04n60z ndf04n60z ndd04n60z r jc 1.3 4.4 1.5 c/w junction ? to ? ambient steady state (note 4) ndp04n60z (note 4) ndf04n60z (note 1) ndd04n60z (note 4) ndd04n60z ? 1 r ja 50 50 38 80 electrical characteristics (t j = 25 c unless otherwise noted) characteristic test conditions symbol min typ max unit off characteristics drain ? to ? source breakdown voltage v gs = 0 v, i d = 1 ma bv dss 600 v breakdown voltage temperature coefficient reference to 25 c, i d = 1 ma bv dss / t j 0.6 v/ c drain ? to ? source leakage current v ds = 600 v, v gs = 0 v 25 c i dss 1 a 150 c 50 gate ? to ? source forward leakage v gs = 20 v i gss 10 a on characteristics (note 5) static drain ? to ? source on ? resistance v gs = 10 v, i d = 2.0 a r ds(on) 1.8 2.0 gate threshold voltage v ds = v gs , i d = 50 a v gs(th) 3.0 4.5 v forward transconductance v ds = 15 v, i d = 2.0 a g fs 3.3 s dynamic characteristics input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz c iss 535 pf output capacitance c oss 62 reverse transfer capacitance c rss 14 total gate charge v dd = 300 v, i d = 4.0 a, v gs = 10 v q g 19 nc gate ? to ? source charge q gs 3.9 gate ? to ? drain (?miller?) charge q gd 10 gate resistance r g 4.7 resistive switching characteristics turn ? on delay time v dd = 300 v, i d = 4.0 a, v gs = 10 v, r g = 5 t d(on) 13 ns rise time t r 9.0 turn ? off delay time t d(off) 24 fall time t f 15 source ? drain diode characteristics (t c = 25 c unless otherwise noted) diode forward voltage i s = 4.0 a, v gs = 0 v v sd 1.6 v reverse recovery time v gs = 0 v, v dd = 30 v i s = 4.0 a, di/dt = 100 a/ s t rr 285 ns reverse recovery charge q rr 1.3 c 4. insertion mounted 5. pulse width 380 s, duty cycle 2%.
ndf04n60z, ndp04n60z, ndd04n60z http://onsemi.com 3 typical characteristics 10 v figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 25 15 10 5 0 0 4 8 6 8 7 5 4 3 0 4 8 figure 3. on ? resistance vs. gate voltage figure 4. on ? resistance vs. drain current and gate voltage v gs (v) i d , drain current (a) 9 8 710 6 5 1 1.5 2 3 2 14 2.5 1.5 0.5 1 2 2.5 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) v ds , drain ? to ? source voltage (v) 150 125 100 75 25 0 ? 25 ? 50 0.8 1.4 2 600 400 300 200 100 0 10 100 1000 10,000 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 2 7 v 6.8 v 6.6 v 6.4 v 6.2 v 6.0 v 5.8 v 5.6 v t j = 25 c v ds 30 v t j = 25 c t j = 150 c t j = ? 55 c 1.5 i d = 2 a t j = 25 c t j = 25 c v gs = 10 v 50 i d = 2 a v gs = 10 v v gs = 0 v t j = 150 c t j = 100 c 6 2 2.5 2.6 3 0.2 6 3.5 20 500 3 3.5 v gs = 15 v
ndf04n60z, ndp04n60z, ndd04n60z http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge v ds , drain ? to ? source voltage (v) qg, total gate charge (nc) 200 150 100 50 0 0 800 20 10 5 0 0 5 10 15 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source ? to ? drain voltage (v) 100 10 1 1 10 100 0.9 0.8 0.7 1.0 0.6 0.5 0.4 0 1 2 3 4 figure 11. maximum rated forward biased safe operating area for ndf04n60z v ds , drain ? to ? source voltage (v) 1000 100 10 1 0.01 0.1 1 10 100 c, capacitance (pf) v gs , gate ? to ? source voltage (v) t, time (ns) i s , source current (a) i d , drain current (a) v gs = 0 v t j = 25 c f = 1.0 mhz c iss c oss c rss 15 20 t j = 25 c i d = 4 a qt qgs qgd v ds v dd = 300 v i d = 4 a v gs = 10 v t d(off) t d(on) t r t f t j = 25 c v gs = 0 v v gs 30 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 100 s 10 s 10 ms 1 ms dc 400 1000 1200 0 100 200 300 400 v ds , drain ? to ? source voltage (v) v gs 600 200 v ds , drain ? to ? source voltage (v) 1000 100 10 1 0.01 0.1 1 10 100 i d , drain current (a) v gs 30 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 100 s 10 s 10 ms 1 ms dc figure 12. maximum rated forward biased safe operating area for ndd04n60z
ndf04n60z, ndp04n60z, ndd04n60z http://onsemi.com 5 typical characteristics 0.1 0.00001 pulse time (s) 10 0.1 0.01 0.001 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) figure 13. thermal impedance for ndf04n60z 1.0 r jc = 1.5 c/w steady state 0.1 0.00001 pulse time (s) 10 0.1 0.01 0.001 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) 1.0 figure 14. thermal impedance for ndd04n60z r jc = 4.4 c/w steady state leads heatsink 0.110 min figure 15. mounting position for isolation test measurement made between leads and heatsink with all leads shorted together. *for additional mounting information, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
ndf04n60z, ndp04n60z, ndd04n60z http://onsemi.com 6 ordering information order number package shipping ? ndf04n60zg to ? 220fp (pb ? free) 50 units / rail ndp04n60zg to ? 220ab (pb ? free) 50 units / rail (in development) ndd04n60z ? 1g ipak (pb ? free) 75 units / rail ndd04n60zt4g dpak (pb ? free) 2500 / tape and reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. marking diagrams a = location code y = year ww = work week g = pb ? free package ndf04n60zg or ndp04n60zg ayww gate source drain 1 gate 2 drain 3 source 4 drain yww 4n 60zg 4 drain 2 drain 1 gate 3 source yww 4n 60zg
ndf04n60z, ndp04n60z, ndd04n60z http://onsemi.com 7 package dimensions to ? 220 fullpak case 221d ? 03 issue j style 1: pin 1. gate 2. drain 3. source dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. to ? 220ab case 221a ? 09 issue ae notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 5: pin 1. gate 2. drain 3. source 4. drain dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j
ndf04n60z, ndp04n60z, ndd04n60z http://onsemi.com 8 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d ? 01 issue b
ndf04n60z, ndp04n60z, ndd04n60z http://onsemi.com 9 package dimensions dpak case 369aa ? 01 issue a style 2: pin 1. gate 2. drain 3. source 4. drain d a b r v s f l 2 pl m 0.13 (0.005) t e c u j ? t ? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.025 0.035 0.63 0.89 e 0.018 0.024 0.46 0.61 f 0.030 0.045 0.77 1.14 j 0.018 0.023 0.46 0.58 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.024 0.040 0.60 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 h 0.386 0.410 9.80 10.40 h 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ndf04n60z/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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